Growth and characterization of materials for infrared detectors

15-16 July 1993, San Diego, California

Publisher: SPIE in Bellingham, Wash

Written in English
Cover of: Growth and characterization of materials for infrared detectors |
Published: Pages: 234 Downloads: 896
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  • Infrared detectors -- Materials -- Congresses.,
  • Infrared technology -- Congresses.

Edition Notes

Includes bibliographical references and index.

StatementRandolph E. Longshore, Jan W. Baars, chairs/editors ; sponsored ... by SPIE--the International Society for Optical Engineering.
SeriesProceedings / SPIE--the International Society for Optical Engineering ;, v. 2021, Proceedings of SPIE--the International Society for Optical Engineering ;, v. 2021.
ContributionsLongshore, Randolph E., Baars, Jan W., Society of Photo-optical Instrumentation Engineers.
LC ClassificationsTA1570 .G75 1993
The Physical Object
Paginationix, 234 p. :
Number of Pages234
ID Numbers
Open LibraryOL1446034M
ISBN 100819405930, 0819412708
LC Control Number93084690

Methods and Materials for Remote Sensing: Infrared Photo-Detectors, Radiometers and Arrays presents the basic principles and the guidelines for the design of IR and microwave radiometers intended for the detection of weak electromagnetic signals in a noisy background. Significant attention is paid in this book to the discussion of the origin of the noises and consideration of the physical Author: Yuri Abrahamian. May 07,  · Growth and Characterization of Bulk Superconductor Material. by Dapeng Chen,Chengtian Lin,Andrey Maljuk,Fang Zhou. Springer Series in Materials Science (Book ) Thanks for Sharing! You submitted the following rating and review. Brand: Springer International Publishing. INFRARED DETECTORS AND EMITTERS: MATERIALS AND DEVICES edited by Peter Capper BAE SYSTEMS Infra-Red Ltd. Growth, Properties and Infrared Device Characteristics of Strained InAsSb-Based Materials Growth and Characterization of InAsSb by Metal -Organic Chemical Vapor Deposition (MOCVD) Infrared Device Results Dec 01,  · This book is concerned with compound semiconductor bulk materials, and has been written for students, researchers and engineers in material science and device fabrication. It provides the elementary and intermediate knowledge of compound semiconductor bulk .

Handbook of Compound Semiconductors: Growth, Processing, Characterization, and Devices (Materials Science and Process Technology Series) Paul H. Holloway, Gary E. McGuire This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also. Conferences related to Molecular beam epitaxial growth Back to Top. IEEE International Magnetic Conference (INTERMAG) INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism. B. Weng *, J. Wang, P. Larson and Y. Liu, “Growth Process Optimization of ZnO Thin Film using Atomic Layer Deposition”, Materials Research Express 3, () (); A. Lambrecht, B. Weng and Z. Shi, invited authors of a chapter “Molecular Beam Epitaxy of IV-VI Compounds” in: Saleem Hashmi (editor-in-chief), Reference Module in Materials Science and Materials Engineering.

The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal Cited by: 4. Professor Krishna is a world leading researcher and innovator in the field of narrow bandgap semiconductors applied to infrared imaging sensors and related technologies. He has more than 13 years of experience in the design, growth, fabrication and testing of infrared detectors and focal plane arrays. His research interests include growth and characterization of novel III-V semiconductor materials by using Molecular Beam Epitaxy system for various optoelectronics applications. He is also involved into the characterization of optoelectronics devices. He has authored more than twenty international publications for various journals and conferences. Bringing together information scattered across many disciplines, this book summarizes the current status of research in compound semiconductor radiation detectors. It examines the properties, growth, and characterization of compound semiconductors as well as the fabrication of radiation sensors, with particular emphasis on the X- and gamma-ray.

Growth and characterization of materials for infrared detectors Download PDF EPUB FB2

Growth and characterization of materials for infrared detectors: JulySan Diego, California. Growth and characterization of materials for infrared detectors and nonlinear optical switches: AprilOrlando, Florida.

Relative response of infrared detectors is plotted as a function of wave-length with either a vertical scale of W–1 or photon–1 (see Fig. The Figure The electromagnetic spectrum (adapted from Ref.

12). Infrared Detector Characterization 5. Wafer Level Characterization of Infrared Detectors Teressa Rose Specht Follow this and additional works This Thesis is brought to you for free and open access by the Engineering ETDs at UNM Digital Repository.

It has been accepted for inclusion inAuthor: Teressa Rose Specht. The emphasis in the development of photon detectors has been toward response to ever longer wavelengths and shorter time constants. At the same time there has been 1. CHARACTERIZATION OF INFRARED DETECTORS 9 a concerted effort to achieve increased detectivity up to the theoretical Henry Levinstein.

Growth and characterization of CdTe single crystals for radiation detectors. Abstract. To improve the productivity of CdTe radiation detectors, the crystal growth by traveling heater method (THM) as well as the quality of the fabricated detectors were investigated.

In the THM growth, optimization of the solvent volume was found to be Cited by: The RoA product of InAsSb detectors has been theoretically and experimentally analyzed. AB - We report Growth and characterization of materials for infrared detectors book the growth of InSb, InAsSb, and InTlSb alloys for infrared photodetector applications.

The fabrication and characterization of photodetectors based on these materials are also by: 1. @article{osti_, title = {Liquid phase epitaxial growth and characterization of germanium far infrared blocked impurity band detectors}, author = {Bandaru, Jordana}, abstractNote = {Germanium Blocked Impurity Band (BIB) detectors require a high purity blocking layer.

Infrared (IR) detectors fall into two main categories, thermal and photon. The earliest detectors of IR were thermal in nature, e.g. thermometers. The subsequent developments of these detectors, such as thermopiles, resistance bolometers, Golay cells and pyroelectric detectors, can operate at.

This book is an attempt to provide an up-to-date view of the various IR detector/emitter materials systems currently in use or being actively researched. This chapter covers the growth and.

GROWTH AND CHARACTERIZATION OF ANISOTROPIC GASE SEMICONDUCTOR FOR RADIATION DETECTION AND TH Z APPLICATIONS By Haseeb Nazir Bachelor of Science University of South Carolina, Submitted in Partial Fulfillment of the Requirements For the Degree of Master of Science in.

Because of these problems, antimony-based III–V materials have been considered as alternatives. Consequently, there has been a tremendous growth in research activity on InSb-based systems. In fact, InSb-based compounds have proved to be interesting materials for both basic and applied by: 2.

Capabilities include novel detector design, epitaxial materials growth, end-to-end large-area detector fabrication process, characterization of infrared focal plane arrays, and delivery of focal planes and integrated dewar cooler assemblies to infrared instruments.

This book presents approaches, materials, and devices that eliminate the cooling requirements of IR photodetectors operating in the middle- and long-wavelength ranges of the IR spectrum.

Introduction (partial) Many materials have been investigated in the infrared (IR) field. By observing the history of the development of IR detector technology, a simple theorem, after Norton[1], can be stated: All physical phenomena in the range of about - 1 eV can be proposed for IR detectors.

Nov 04,  · Progress in Crystal Growth and Characterization of Materials 28, 57–83 () CrossRef Google Scholar R. Triboulet, The travelling heater method (THM). Yuri V. Vorobiev, Jesus Gonzalez-Hernandez, Martin Yanez-Limon, Juan Francisco Perez-Robles, Francisco J.

Espinoza-Beltran, Rafael Ramirez-Bon, Valery N. Zakharchenko, and Roman V. Zakharchenko "Optical methods of control and characterization of materials for infrared detectors", Proc. SPIEOptical Diagnostics of Materials and Devices for Opto- Micro- and Quantum Electronics Author: Yuri V.

Vorobiev, Jesus Gonzalez-Hernandez, Martin Yanez-Limon, Juan Francisco Perez-Robles, Francis. Structures and growth characteristics of crystals based on the Cd-Te lattice, which are potentially useful in infrared radiation detectors, are described. Single crystals of CdTe, Mn(x)Cd(1-x)Te, and CdSe(y)Te(1-y) have been grown by the vertical Bridgman method and those of Zn(x)Cd(1-l)Te by zone leveling.

Modified triglycine sulfate (TGS) single crystals have been grown from the aqueous solution by doping with urea, yttrium sulfate, l-serine + cobalt sulfate, and l-alanine + urea in the ferroelectric phase using a temperature lowering effects of these different dopants on the growth, dielectric, pyroelectric, optical, and mechanical properties have been investigated.

"Novel InTlSb Infrared Detectors" chapter 8 in Long Wavelength Infrared Detectors M. Razeghi, Editor, Gordon and Breach Publishers, Inc., published [More About This Book] "Growth and Characterization of GaInP/GaAs System for Quantum Well Infrared Photodetector Applications" chapter 2 in Long Wavelength Infrared Detectors.

Fundamentals of Infrared Detector Materials (SPIE Tutorial Text Vol. TT76) (Tutorial Texts) [Michael A. Kinch] on *FREE* shipping on qualifying offers. The choice of available infrared (IR) detectors for insertion into modern IR systems is both large and confusing. The purpose of this volume is to provide a technical database from which rational IR detector selection criteria evolveCited by: TABLEOFCONTENTS Page Abstract 1 KeyWords 1 ExecutiveSummary 2 1.

Introduction 5 the5thsense.comound 5 (1) InfraredDetectorsUsedontheGOESandTIROSSatellites 5 (2. Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and photonic device applications.

These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecomm.

Jan 01,  · Radiation-detector materials physics is reviewed, which sets the stage for performance metrics that determine the relative merit of existing and new materials. Semiconductors and scintillators represent the two primary classes of radiation detector materials that are of by: Compound Semiconductor Radiation Detectors (Series in Sensors) [Alan Owens] on *FREE* shipping on qualifying offers.

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratoryAuthor: Alan Owens.

Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration.

Mercury Cadmium Telluride: Growth, Properties and Applications provides both an introduction. Purchase Handbook of Infrared Detection Technologies - 1st Edition. Print Book & E-Book. ISBNMaterials growth technology. Junction forming techniques in homojunction arrays. Multispectral HgCdTe infrared detectors.

Near-infrared avalanche photodiodes. Since the infrared radiation is a part of thermal spectrum, i.e. hot objects radiate in infrared range, thermal sensing of IR radiation can be achieved by application of different temperature dependent physical qualities.

Pyroelectric detectors work on variation of the internal electrical polarization by. This chapter focuses on characterization, modeling, and simulation about the type-II superlattices photodetector application. Despite dramatic improvements in type-II superlattices in the past 15 years, challenges still exist in InAs/GaSb and InAs/GaInSb superlattices: The diffusion current, Shockley-Read-Hall (SRH) recombination current, tunneling current, and surface leakage current at Author: Sanghyun Lee, Kent J.

Price. The unique property of the superlattices is that their detection wavelengths can be broadly tuned by changing the design and composition of the layered structures. The precise arrangements of the nanoscale materials in superlattice structures helps to enhance. III-Nitride Semiconductors: Growth - CRC Press Book This volume is focused on the growth techniques for III-Nitrides featuring chapters written by leading experts in the field.

This unique volume provides a comprehensive review and introduction to growth issues, substrates and characterization of GaN and related compounds for newcomers to the.Apr 01,  · It offers them the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entering this field.

In the first part, the book describes the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications.Optical materials To converge or focus infrared radiation, optical lenses made of quartz, CaF2, Ge and Si, polyethylene Fresnel lenses, and mir-rors made of Al, Au or a similar material are used according to the wavelengths.

Figure shows the transmittance for typi-cal infrared optical materials. In some applications, band-pass.